P2615ATG

P2615ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 26mΩ @VGS = 10V ID 53A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC= 25 °C TC= 100 °C ID IDM IAS 53 34 160 37 Avalanche Energy L = 0.3 mH EAS 210 Power Dissipation TC= 25 °C TC= 100°C Operating Junction & Storage Temperature Range PD Tj, Tstg 178 71 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 0.7 62.5 UNITS °C / W REV 1.1 1 2014/5/28 P2615ATG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Volta...