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P2610ATG
N-Channel MOSFET
Description
P2610ATG N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26mΩ @VGS = 10V ID 50A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source
Voltage
Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipatio...
UNIKC
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