P25NM60N

N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N STB25NM60N s s s s s STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60N PRODUCT PREVIEW Figure 1: Package RDS(on) < 0.170 Ω < 0.170 Ω < 0.170 Ω < 0.170 Ω < 0.170 Ω ID 20 A 20(*) A 20 A 20 A 20 A VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V 3 1 2 1 3 2 TO-220 3 1 TO-220FP s WORLD’S LOWEST ON RESISTANCE TYPICAL RDS(on) = 0.140 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE D²PAK 3 12 3 I²PAK TO-247 Figure 2: Internal Schematic Diagram 2 1 DESCRIPTION The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters APPLICATIONS The MDmesh™ II family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Code SALES TYPE STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N STB25NM60N MARKING B25NM60N F25NM60N P25NM60N W25NM60N B25NM60N PACKAGE I²PAK TO-220FP TO-220 TO-247 D²PAK PACKAGING TUBE TUBE TUBE TUBE TAPE & REEL Rev. 4 June 2005 This is preliminary information on a new product now in development. Details are...