P2060ZT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
190mΩ @VGS = 10V
ID 20A
TO-220
A...
P2060ZT
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
190mΩ @VGS = 10V
ID 20A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 600
Gate-Source
Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM IAS EAS
20 12 59 4 320
Power Dissipation
TC = 25 °C TC = 100 °C
PD
48 19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 40mH ,starting TJ = 25°C.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM UNITS 1 °C / W
62.5
REV 1.0
1 2017/1/18
P2060ZT
N-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwis...
