P1825AT

P1825AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.2Ω @VGS = 10V ID 18A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 18 8.5 72 Avalanche Current IAS 15 Avalanche Energy L = 1mH EAS 106 Power Dissipation TC = 25 °C TC = 100 °C PD 90 36 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.39 62.5 UNITS °C / W Ver 1.0 1 2012/4/13 P1825AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Vol...