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P1606BD
N-Channel Transistor
Description
P1606BD N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 18.5mΩ @VGS = 10V ID 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source
Voltage
VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 42 26 110 Avalanche Cu...
UNIKC
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