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P10NK70Z

STMicroelectronics

N-Channel MOSFET

STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP10N...


STMicroelectronics

P10NK70Z

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Description
STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP10NK70Z STP10NK70ZFP s s s s s s s VDSS 700 V 700 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8.6 A 8.6 A Pw 150 W 35 W TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s ORDERING INFORMATION SALES TYPE STP10NK70Z STP10NK70ZFP MARKING P10NK70Z P10NK70ZFP PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE October 2002 1/10 Free Datasheet http://www.datasheet4u.net/ STP10NK70Z/STP10NK70ZFP ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter STP10NK70Z Value STP10NK70ZFP Unit V V V 8.6 (*) 5.4 (*) 34 (*) 35 0.28 A A A W W/°C KV V/ns 2500 V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain C...




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