P0850AT

P0850AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 0.85Ω @VGS = 10V ID 8A TO-220 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 8 5 30 6.8 Avalanche Energy L = 10mH EAS 232 Power Dissipation TC = 25 °C TC = 100 °C PD 125 50 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed SYMBOL RqJC RqJA TYPICAL MAXIMUM 1 62.5 UNITS °C / W Ver 1.0 1 2012/4/16 P0850AT N-Channel Enhancement Mode MOSFET PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR...