Logic Level Enhancement P06B03LV NIKO-SEM Dual P-Channel Mode Field Effect Transistor
SOP-8
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PRODUCT...
Logic Level Enhancement P06B03LV NIKO-SEM Dual P-Channel Mode Field Effect Transistor
SOP-8
www.DataSheet4U.com
PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 50mΩ ID -6A G :GATE D :DRAIN S :SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
1
SYMBOL VDS VGS
LIMITS -30 ±20 -6 -5 -30 2.5 1.3 -55 to 150
UNITS V V
TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C
ID IDM PD Tj, Tstg
A
W
Operating Junction & Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL
MAXIMUM 62.5
UNITS °C / W
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID =- 5A VGS = -10V, ID = -6A VDS = -10V, ID = -6A -30 65 40 16 80 50 -30 -0.9 -1.5 -3 V LIMITS UNIT MIN TYP MAX
±100 nA 1 10 µA A mΩ S
MAY-19-2003 1
Logic Level Enhancement P06B03LV NIKO-SEM Dual P-Channel Mode Field Effect Transi...
