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P0470ETFS Datasheet

Part Number P0470ETFS
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0470ETFS DatasheetP0470ETFS Datasheet (PDF)

P0470ETF / P0470ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 2.8Ω @VGS = 10V ID 4A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 4 2.6 16 2 20 Power Dissipation TC = 25 °C TC = 100 °C PD 54 22.

  P0470ETFS   P0470ETFS






Part Number P0470ETFS
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel MOSFET
Datasheet P0470ETFS DatasheetP0470ETFS Datasheet (PDF)

NIKO-SEM N-Channel Enhancement Mode P0470ETF:TO-220F P0470ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 2.8Ω ID 4A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current 3 Avalanche Energy3 TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC = 100 °C.

  P0470ETFS   P0470ETFS







N-Channel MOSFET

P0470ETF / P0470ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 2.8Ω @VGS = 10V ID 4A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 4 2.6 16 2 20 Power Dissipation TC = 25 °C TC = 100 °C PD 54 22 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V, L = 10mH, starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.3 62.5 UNITS °C / W REV 1.0 1 2017/1/23 P0470ETF / P0470ETFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERIS.


2017-02-09 : AW2013    WSB5503W    QG301C    QG302C    QG303C    QG304C    QG305C    QG306C    D1010ADT    PZ0703ETF   


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