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P0460EIS
MOSFET
Description
P0460EIS N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.3Ω @VGS = 10V ID 4A TO-251(IS) 1.GATE 2.DRAIN 3.SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source
Voltage
VDS 600 Gate-Source
Voltage
VGS ±30 Continuous Drain Current2 Pulsed Drain Current...
UNIKC
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