P0460ATF(S)
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2Ω @VGS = 10V
ID 4A
TO-220F T...
P0460ATF(S)
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2Ω @VGS = 10V
ID 4A
TO-220F TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS 600
Gate-Source
Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM EAS
4 2.5 20 20
Power Dissipation
TC = 25 °C TC = 100 °C
PD
27 11
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed . 3VDD = 50V,L=10mH, starting TJ = 25°C
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 4.5 62.5
UNITS °C / W
Ver 2.0
1 2012/4/23
P0460ATF(S)
N-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
...