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P0460AS Datasheet

Part Number P0460AS
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0460AS DatasheetP0460AS Datasheet (PDF)

P0460AS / P0460AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-263 TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 4 2.5 20 4 80 Power DissipationA TC = 25 °C TC = 100 °C PD .

  P0460AS   P0460AS






Part Number P0460ATFS
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0460AS DatasheetP0460ATFS Datasheet (PDF)

P0460ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 4 2.5 20 20 Power Dissipation TC = 25 °C TC = 100 °C PD 27 11 Operating Junct.

  P0460AS   P0460AS







Part Number P0460ATF
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0460AS DatasheetP0460ATF Datasheet (PDF)

P0460ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 4 2.5 20 20 Power Dissipation TC = 25 °C TC = 100 °C PD 27 11 Operating Junct.

  P0460AS   P0460AS







Part Number P0460AT
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0460AS DatasheetP0460AT Datasheet (PDF)

P0460AS / P0460AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-263 TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 4 2.5 20 4 80 Power DissipationA TC = 25 °C TC = 100 °C PD .

  P0460AS   P0460AS







Part Number P0460AI
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0460AS DatasheetP0460AI Datasheet (PDF)

P0460AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 4 2.4 20 3 Avalanche Energy3 EAS 45 Power Dissipation TC = 25 °C TC = 100 °C PD 78 31 Operating Junction .

  P0460AS   P0460AS







N-Channel MOSFET

P0460AS / P0460AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-263 TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 4 2.5 20 4 80 Power DissipationA TC = 25 °C TC = 100 °C PD 75 48 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.67 62.5 UNITS °C / W Ver 1.0 1 2012/4/12 P0460AS / P0460AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, U.


2017-02-01 : AM2N-NZ    AM2N-2405DH60-NZ    P1212AT    P1065AT    P1060AT    P0460AS    P0460AT    P1350AT    P8010BT    PA410BTF   


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