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P0425AI Datasheet

Part Number P0425AI
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0425AI DatasheetP0425AI Datasheet (PDF)

P0425AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.8Ω @VGS = 10V ID 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 4 3 16 Avalanche Current IAS 4 Avalanche Energy L = 7.7mH EAS 60 Power Dissipation TC = 25 °C TC = 100 °C PD 69 27 Operating Junction & Storage Temperature .

  P0425AI   P0425AI






Part Number P0425AD
Manufacturers UNIKC
Logo UNIKC
Description N-Channel Transistor
Datasheet P0425AI DatasheetP0425AD Datasheet (PDF)

P0425AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.8Ω @VGS = 10V ID 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 4 3 16 Avalanche Current IAS 4 Avalanche Energy L = 7.7mH EAS 60 Power Dissipation TC = 25 °C TC = 100 °C PD 69 27 Operating Junction & Storage Temperature .

  P0425AI   P0425AI







N-Channel MOSFET

P0425AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.8Ω @VGS = 10V ID 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 4 3 16 Avalanche Current IAS 4 Avalanche Energy L = 7.7mH EAS 60 Power Dissipation TC = 25 °C TC = 100 °C PD 69 27 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.8 50 UNITS °C / W Ver 1.0 1 2012/4/16 P0425AI N-Channel Enhancement Mode MOSFET PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 250 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 25.


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