P0320AL

P0320AL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 1.1Ω @VGS = 10V ID 1A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 1 0.8 4 Avalanche Current IAS 2 Avalanche Energy L = 26.6mH EAS 53 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W Ver 1.0 1 2012/4/12 P0320AL N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 200 Gate Thr...