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OPE5685

ETC

High Speed GaAlAs Infrared Emitter

High Speed GaAlAs Infrared Emitter OPE5685 The OPE5685 is GaAlAs infrared emitting diode that is designed for high powe...


ETC

OPE5685

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Description
High Speed GaAlAs Infrared Emitter OPE5685 The OPE5685 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 plastic package and has wide beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. FEATURES High speed : 25ns rise time 850nm wavelength Wide beam angle Low forward voltage High power and high reliability Available for pulse operating APPLICATIONS Emitter of IrDA IR Audio and Telephone High speed IR communication IR LANs Available for wireless digital data transmission DIMENSIONS (Unit : mm) 5.0 1.3 Max 5.7 8.7 24.0 Min 7.7 2- 0.5 2.0 2.5 Anode Cathode Tolerance : ±0.2mm STORAGE Condition : 5°C~35°C,R.H.60% Terms : within 3 months from production date Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS Item Symbol Rating Power Dissipation PD 150 Forward current IF 100 Pulse forward current IFP 1.0 *1 Reverse voltage VR 4.0 Operating temp. Topr. -25~ +85 *2 Soldering temp. Tsol. 260. *...




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