www.DataSheet4U.com
OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS...
www.DataSheet4U.com
OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST
LOW
VOLTAGE, LOW RDS(on) POWER
MOSFETS IN HERMETIC ISOLATED PACKAGE
50V And 60V Ultra Low RDS(on) Power
MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES
Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetic packaged
MOSFETs are ideally suited for low
voltage applications; battery powered
voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
PART NO. OM60N06SA OM50N06SA OM50N06ST OM60N05SA OM50N05SA OM50N05ST VDS (V) 60 60 60 50 50 50 RDS(on) ( ) .025 .030 .035 .025 .030 .035 ID (A) 60 50 50 60 50 50 Package TO-254AA TO-254AA TO-257AA TO-254AA TO-254AA TO-257AA
3.1
SCHEMATIC
Drain
T-3 PIN CONNECTION
M-PAK PIN CONNECTION
1 2 3
Gate
1 2 3
Source
Pin 1: Drain Pin 2: Source Pin 3: Gate
Pin 1: Drain Pin 2: Source Pin 3: Gate
4 11 R1 Supersedes 3 02 R0
3.1 - 65
OM60N06SA - OM50N05ST ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter VDS VDGR VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C PD @ TC = 100°C Junction-To-Case TJ Tstg Drain-Source
Voltage Drain-Gate
Voltage (RGS = 1 M ) Gate-Source
Voltage, Continuous Continuous Drain C...