OM6050SJ

www.DataSheet4U.com OM6050SJ OM6052SJ OM6054SJ OM6051SJ OM6053SJ OM6055SJ HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) High Current, High Voltage 100V Thru 1000V, Up To 100 Amp N-Channel, Size 7 MOSFETs, High Energy Capability FEATURES Isolated Hermetic Metal Package Size 7 Die, High Energy Fast Switching, Low Drive Current Ease Of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS @ 25°C PART NUMBER OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ SCHEMATIC 1 VDS 100 V 200 V 500 V 600 V 800 V 1000 V RDS(on) .014 .030 .160 .230 .500 .800 ID (Continuous) 100 A 55 A 30 A 25 A 18 A 10 A 3.1 MECHANICAL OUTLINE ø.165 .155 .805 .795 .290 .260 .065 .055 .150 .950 .140 .930 .665 .645 1 2 3 3 .750 .500 .200 .065 ø.055 2 .200 .400 .160 TO-267 4 11 R0 3.1 - 105 OM6050SJ - OM6055SJ ABSOLUTE MAXIMUM RATINGS (T Parameter Drain Source Voltage Drain Gate Voltage (RGS = 1.0 M ) Continuous Drain Current @...