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OM6017SA OM6019SA OM6018SA OM6020SA
POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package
FEATURES
• • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels Same as IRFM 150 - 450 Series Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. .
(OM6017SA - OM6020SA) POWER MOSFET
www.DataSheet4U.com
OM6017SA OM6019SA OM6018SA OM6020SA
POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package
FEATURES
• • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels Same as IRFM 150 - 450 Series Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ 25°C
PART NUMBER OM6017SA OM6018SA OM6019SA OM6020SA VDS 100 V 200 V 400 V 500 V RDS(on) .065 .100 .33 .42 ID 25 A 25 A 13 A 11 A
3.1
SCHEMATIC
POWER RATING
4 11 R4 Supersedes 1 07 R3
3.1 - 85
3.1
OM6017SA - OM6020SA
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6017SA
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1.1 0.1 0.2
(TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6.