OM11N55SA

www.DataSheet4U.com OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operation). They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PART NUMBER OM11N60 OM11N55 VDS 600V 550V RDS(on) .50 .44 ID(MAX) 11A 11A 3.1 SCHEMATIC DRAIN GATE SOURCE 4 11 R1 Supersedes 2 04 R0 3.1 - 19 3.1 OM11N60SA - OM11N55SA www.DataSheet4U.com ELECTRICAL CHARACTERISTICS: STATIC P/N OM11N60SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 .47 11.0 0.1 0.2 2.0 600 TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: ...