GaAs Hall Devices
OH10008
GaAs Hall Device
Magnetic sensor
• Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input re...
GaAs Hall Devices
OH10008
GaAs Hall Device
Magnetic sensor
Hall
voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) Input resistance: typ. 750 kΩ Satisfactory linearity of GaAs hall
voltage with respect to the magnetic field Small temperature coefficient of the hall
voltage: β ≤ − 0.06%/°C Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package.
1.45 ± 0.05 0.9 ± 0.05
Unit : mm
4
1
3
2
0.6 ± 0.1 1.45 ± 0.05 0.8 ± 0.1 2.85 ± 0.25 5
0.2 max. 0.26 ± 0.05
5 0 to 0.15
I Applications
Thin and small hall motors (Applicable to CD, VD, VCR, FDD, and other portable equipment) Automotive equipment Measurement equipment Applicable to wide-varying field (OA equipment, etc.)
0.5 ± 0.1
φ 1.0 ± 0.025
1 : VC Input (+) side 2 : VH Output (−) side 3 : VC Input (−) side 4 : VH Output (+) side Mini Type Package (4-pin) with positioning projection
I Absolute Maximum Ratings Ta = 25°C
Parameter Control
voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD Topr Tstg Rating 12 100 −30 to +125 −55 to +125 Unit V mW °C °C
Marking Symbol: B
I Electrical Characteristics Ta = 25°C
Parameter Hall
voltage*1 Unequilibrium ratio*2, 4 Symbol VH VHO RIN ROUT β α γ Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.5 0.75 1.5 5 −0.06 0.3 2 Min 80 Typ 105 Max 130 ±19 Unit mV mV kΩ kΩ %/°C %/°C %
...