HIGH-POWER GaAlAs IRLED ILLUMINATOR
FEATURES • • • • • • Super high power output 880nm peak emission Three chips connect...
HIGH-POWER GaAlAs IRLED ILLUMINATOR
FEATURES Super high power output 880nm peak emission Three chips connected in series TO-66 header for good heat dissipation 100% tested for power output Electrically isolated case
OD-663
.053 .067
LED CHIPS .140 R (REF. ONLY) .342 R
.325
. 142 . 152
EPOXY
.084 .096 .030
.426 .432
.955 .965
1.225 1.255
.480
.350 MIN CATHODE .170 MAX DIMPLE .680 .700 ANODE
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward
Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 300mA IF = 8A IF = 50mA IF = 300mA IR = 10µA VR = 0V MIN 150 TYP 170 3500 880 120 5 4.5 30 30 1 1 80 MAX UNITS mW nm Deg nm
Reverse Breakdown
Voltage, VR
5
Volts Volts µsec µsec pF
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse
Voltage Power Dissipation1 400mA 5V 8A 2W
Peak Forward Current (10µs, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2
-55°C to 100°C 60°C/W Typical 16°C/W Typical 100°C
1Heat transfer minimized by measuring in still air with minimum heat...