OD-50L

SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES Ultra high power output Four wire bonds on die corners Very narrow optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches OD-50L ANODE (CASE) GLASS DOME .250 .262 .357 .362 .100 .018 .324 .332 .200 .031 .025 .071 .095 .500 CATHODE .040 45° ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time CE TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA MB E MIN 40 TYP 50 600 500 880 80 7 1.65 5 30 90 0.7 0.7 1000mW 500mA 10A 5V 260°C -55°C to 100°C 100°C 150°C/W Typical 60°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 2 Volts Volts pF μsec μsec 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com http://www.Datasheet4U.com RoHS ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Peak Forward Current (10μs, 400Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) EN THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature...