NXPSC06650

NXPSC06650 Silicon Carbide Diode 8 October 2018 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5; Tmb ≤ 124 °C; square-wave pulse; Fig. 1; Fig. 2 Tj junction temperature Static characteristics VF forward voltage IF = 6 A; Tj = 25 °C; Fig. 4 Min Typ Max Unit - - 650 V - - 6A - - 175 °C - 1.5 1.7 V WeEn Semiconductors NXPSC06650 Silicon Carbide Diode Symbol Parameter Dynamic characteristics Qr recovered charge Conditions IF = 6 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 5 Min Typ Max Unit - 10 - nC 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode mb 2 A anode mb mb mounting base; connected to cathode Graphic symbol KA 001aaa020 12 TO-220AC (SOD59A) 6. Ordering information Table 3. Orderi...