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NX8561JD

NEC

LASER DIODE

DATA SHEET LASER DIODE NX7460LE 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION ...


NEC

NX8561JD

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Description
DATA SHEET LASER DIODE NX7460LE 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output power, high efficiency, and stable fundamental mode. FEATURES InGaAsP strained MQW DC-PBH laser diode High output power Pf = 120 mW MIN. @ IF = 550 mA CW Internal optical isolator, thermoelectric cooler and InGaAs monitor photo diode Hermetically sealed 14-pin butterfly package Single mode fiber pigtail Wide operating temperature range TC = 0 to +65 °C 15.24 2.54 4– φ 2.67 22.3 PACKAGE DIMENSIONS in millimeters #7 Thermistor TOP VIEW #1 Case 8.89±0.13 13.3 –0.0 1.25 4.0±0.15 +1.0 + – #14 7 8 1 14 12.7±0.15 6.0 LD #8 PD 0.5 20.83±0.13 26.04±0.13 Optical Fiber (SMF) Length: 1 m MIN. Pin No. 1 2 3 4 5 6 7 PIN CONNECTIONS Function Cooler Anode Thermistor PD Anode PD Cathode Case Ground NC NC Pin No. Function 8 NC 9 NC 10 LD Anode, Case Ground 11 LD Cathode 12 NC 13 Case Ground 14 Cooler Cathod 0.30 8.2±0.2 5.6 1.0 29.97±0.25 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC repr...




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