LASER DIODE
Description
LASER DIODE
NX5330SA
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
DESCRIPTION
The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain
FEATURES
High output power Long ...
California Eastern Labs
NX5330SA PDF File
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