NVMFS5C423NL
Power MOSFET
40 V, 2.0 mW, 150 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design ...
NVMFS5C423NL
Power
MOSFET
40 V, 2.0 mW, 150 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C423NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
40
V
Gate−to−Source
Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
150
A
110
83
W
42
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
31
A
22
3.7
W
1.8
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
900
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C + 175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 14 A)
IS
81
A
EAS
280 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − ...