NVM 3060 4096-Bit EEPROM
Edition Feb. 14, 1990 6251-309-2/E
ITT Semiconductors
NVM 3060
Contents Page 3 4 4 4 4 5 5 5...
NVM 3060 4096-Bit EEPROM
Edition Feb. 14, 1990 6251-309-2/E
ITT Semiconductors
NVM 3060
Contents Page 3 4 4 4 4 5 5 5 5 7 8 8 8 8 8 9 9 9 9 10 Section 1. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.5.1. 2.5.2. 2.5.3. 3. 3.1. 3.2. 3.3. 3.4. 4. 4.1. 4.2. 4.3. 5. Title Introduction Specifications Outline Dimensions Pin Connections Pin Descriptions Pin Circuits Electrical Characteristics Absolute Maximum Ratings Recommended Operating Conditions Characteristics Functional Description Memory Operation Testing Protected Matrix Shipment Test Functions Block Programming Read Reference Shifting Charge Pump Disable Description of the IM Bus
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NVM 3060
4096-Bit EEPROM 1. Introduction Electrically erasable programmable read-only memory (EEPROM) in N-channel floating-gate technology with a capacity of 512 words, 8 bits each. The NVM 3060 is intended for use as a reprogrammable non-volatile memory in conjunction with the CCU 2030/2050/2070/3000 series Central Control Units or the SAA 12xx and TVPO 2066 Remote Control and Tuning ICs. It serves for storing the tuning information as well as several analog settings, further alignment information given in the factory when producing the TV set. The stored information remains stored even with the supply
voltages switched off. Reading and programming operations are executed via the IM bus (see section 5.). Input and output signals are TTL level. An address option input provides the possibility to operate two memories in parallel, to obtain a total storage c...