NVATS5A112PLZ
Power MOSFET 60 V, 43 mΩ, 27 A, P-Channel
Automotive Power MOSFET designed for compact and efficient de...
NVATS5A112PLZ
Power
MOSFET 60 V, 43 mΩ, 27 A, P-Channel
Automotive Power
MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified
MOSFET and PPAP capable suitable for automotive applications.
Features Low On-Resistance High Current Capability 100% Avalanche Tested AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252) Pb-Free, Halogen Free and RoHS compliance
Typical Applications Reverse Battery Protection Load Switch Automotive Front Lighting Automotive Body Controllers
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source
Voltage
Gate to Source
Voltage
Drain Current (DC) Drain Current (Pulse) PW 10 s, duty cycle 1% Power Dissipation Tc = 25C
VDSS VGSS ID
IDP
PD
60 V 20 V 27 A 81 A
48 W
Operating Junction and Storage Temperature
Tj, Tstg
55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS
50 mJ
Avalanche Current (Note 3)
IAV
13 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 10 V, L = 500 H, IAV = 13 A
3 : L ≤ 500 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Symbol RJC
Value 3.1
Unit C/W
Junction to Ambient (Note 4)
RJA
80.5
Note 4...