NUS3116MT
Main Switch Power MOSFET and Dual Charging BJT
−12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package
This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in the battery−powered portable electronics.
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