NUP1301ML3T1

www.DataSheet4U.com NUP1301ML3T1 Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1 is a MicroIntegration™ device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features http://onsemi.com Low Capacitance (0.9 pF Maximum) Single Package Integration Design Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground Pb−Free Package is Available T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection ANODE 1 CATHODE 2 3 CATHODE/ANODE 3 1 2 SOT−23 CASE 318 STYLE 11 Applications MARKING DIAGRAM 53 M 1 53 = Device Code M = Date Code MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S Symbol VR IF IFM(surge) VRRM IF(AV) Value 70 215 500 70 715 Unit Vdc mAdc mAdc V mA ...