NTTFS5820NL
MOSFET – Power
60 V, 37 A, 11.5 mW
Features
Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
TA = 25°C TA = 100°C
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