NTS4001N, NVS4001N
MOSFET – Single, N-Channel, Small Signal, SC-70
30 V, 270 mA
Features
• Low Gate Charge for Fast Sw...
NTS4001N, NVS4001N
MOSFET – Single, N-Channel, Small Signal, SC-70
30 V, 270 mA
Features
Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC−Q101 Qualified and PPAP Capable − NVS4001N These Devices are Pb−Free and are RoHS Compliant
Applications
Low Side Load Switch Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC Buck Converters Level Shifts
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source
Voltage
Gate−to−Source
Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady TA = 25 °C State
TA = 85 °C Steady TA = 25 °C State
VDSS VGS ID
PD
30
V
±20
V
270 mA
200
330 mW
Pulsed Drain Current
t =10 ms
IDM
800 mA
Operating Junction and Storage Temperature TJ, TSTG −55 to °C
150
Source Current (Body Diode)
IS
270 mA
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2011
1
June, 2019 − Rev. 5
http://onsemi.com
V(BR)DSS 30 V
RDS(on) TYP 1.0 W @ 4.0 V
1.5 W @ 2.5 V
...
