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NTQS6463R2 Datasheet

Part Number NTQS6463R2
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTQS6463R2 DatasheetNTQS6463R2 Datasheet (PDF)

NTQS6463 Power MOSFET −20 V, −6.8 A, P−Channel TSSOP−8 Features • • • • • • • New Low Profile TSSOP−8 Package Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperatures Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones Lithium Ion Battery Applications Note Book PC http://onsemi.com VDSS −20 V RDS(on) TYP 20 mW @ −10 V ID MAX −6.8 A A.

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Power MOSFET

NTQS6463 Power MOSFET −20 V, −6.8 A, P−Channel TSSOP−8 Features • • • • • • • New Low Profile TSSOP−8 Package Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperatures Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones Lithium Ion Battery Applications Note Book PC http://onsemi.com VDSS −20 V RDS(on) TYP 20 mW @ −10 V ID MAX −6.8 A Applications • Power Management in Portable and Battery−Powered Products, i.e.: • • P−Channel D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed (Note 3) Total Power Dissipation (Note 1) @ TA = 25°C Drain Current (Note 2) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed (Note 3) Total Power Dissipation (Note 2) @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 40 V, IL = 18.4 A, L = 5.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Symbol VDSS VGS ID ID IDM PD Value −20 "12 −5.5 −4.4 "30 0.93 W Unit V V A 8 G S MARKING DIAGRAM TSSOP−8 CASE 948S PLASTIC 1 463 Y WW N = Device Code = Year = Work Week = MOSFET 463 YWW N A ID ID IDM PD TJ, Tstg EAS −6.8 −5.4 "30 1.39 −55 to +150 845 W °C mJ D S S G PIN ASSIGNMENT 1 2 .


2005-05-13 : 2840    STK350-000    STK350-010    STK350-020    STK350-030    STK350-040    STK350-050    STK4141    STK4141    STK4141V   


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