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NTP90N02

ON Semiconductor

Power MOSFET

NTB90N02, NTP90N02 Power MOSFET 90 Amps, 24 Volts N−Channel D2PAK and TO−220 Designed for low voltage, high speed switc...


ON Semiconductor

NTP90N02

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Description
NTB90N02, NTP90N02 Power MOSFET 90 Amps, 24 Volts N−Channel D2PAK and TO−220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com Power Supplies Converters Power Motor Controls Bridge Circuits V(BR)DSS RDS(on) TYP 5.0 mW @ 10 V 7.5 mW @ 4.5 V ID MAX 24 V 90 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Symbol VDSS VGS ID IDM PD TJ, Tstg Value 24 "20 90* 200 85 0.66 −55 to +150 733 Unit Vdc Vdc 4 4 1 TO−220AB CASE 221A Style 5 2 3 2 3 D2PAK CASE 418B Style 2 A A W W/°C °C 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 mH, IL(pk) = 17 A, RG = 25 W) Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS mJ NTx90N02 LLYWW °C/W RqJC RqJA TL 1.55 70 260 °C 1 Gate NTx90N02 LLYWW 3 Source 2 Drain 1 Gate 2 Drain = Device Code = P or B = Location Code 3 = Year Source = Work Week 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum reco...




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