NTP65N02R

NTB65N02R, NTP65N02R Product Preview Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK http://onsemi.com Features Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Fast Switching 65 A, 24 V RDS(on) = 8.3 mW (TYP) D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain–to–Source Voltage Gate–to–Source Voltage Continuous Symbol VDSS VGS ID IDM PD TJ and Tstg EAS Value 24 ±20 65 160 78 –55 to 150 TBD Unit Vdc Vdc A A W °C 4 mJ TO–220AB CASE 221A Style 5 xxxxx YWW S G Drain Current (Continuous @ TA = 25°C (Note 3) Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Single Pulse Drain–to Source Avalanche Energy – Starting TJ=25°C (VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH, RG = 25 W) Thermal Resistance Junction–to–Case Junction–to–Ambient (Note 1) Junction–to–Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 10 Seconds MARKING DIAGRAMS RqJC RqJA RqJA TL 1.6 67 120 260 °C/W 1 °C D2PAK CASE 418B Style 2 2 3 1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). 3. Chip current capability limited by package. 4 2 1 3 xxxxx YWW PIN ASSIGNMENT PIN 1 2 3 4 FUNCTION Gate Drain Source Drain xxxxx Y WW = Specific Device Code = Year = Work Week ORDERING INFORM...