NTMS5P02R2

NTMS5P02R2 Power MOSFET −5.4 Amps, −20 Volts P−Channel Enhancement−Mode Single SOIC−8 Package http://onsemi.com Features VDSS −20 V RDS(ON) TYP 26 mW @ −4.5 V ID MAX −5.4 A High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency Miniature SOIC−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature Drain−to−Source Avalanche Energy Specified Mounting Information for the SOIC−8 Package is Provided Pb−Free Package is Available Single P−Channel D Applications G S Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MARKING DIAGRAM & PIN ASSIGNMENT www.DataSheet4U.com 8 1 SOIC−8 CASE 751 STYLE 13 8 D D D D E5P02x AYWW G G 1 NC S S G E5P02 x A Y WW G = Specific Device Code = Blank or S = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMS5P02R2 NTMS5P02R2G Package SOIC−8 SOIC−8 (Pb−Free) Shipping † 2500/Tape & Reel 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTMS5P02R2/D NTMS5P02R2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Volt...