NTMS4935N

NTMS4935N Power MOSFET Features www.DataSheet4U.com 30 V, 16 A, N−Channel, SO−8 Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 5.1 mW @ 10 V 7.0 mW @ 4.5 V N−Channel ID MAX 16 A Applications DC−DC Converters Points of Loads Power Load Switch Motor Controls Parameter Symbol VDSS VGS Steady State Steady State Steady State TA = 25°C TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C Steady State Steady State TA = 25°C TA = 70°C TA = 25°C PD IDM TJ, Tstg IS EAS PD ID PD ID ID Value 30 ±20 13 10.4 1.38 10 8.0 0.81 16 12.7 2.1 126 −55 to 150 2.1 128 W A °C A mJ W A W A Unit V V A MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current D G S MARKING DIAGRAM/ PIN ASSIGNMENT 1 SO−8 CASE 751 STYLE 12 Source Source Source Gate 1 4935N AYWWG G Top View 8 Drain Drain Drain Drain TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 16 Apk, L = ...