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NTMS4873NF Datasheet

Part Number NTMS4873NF
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMS4873NF DatasheetNTMS4873NF Datasheet (PDF)

NTMS4873NF Power MOSFET Features www.DataSheet4U.com 30 V, 11.5 A, N−Channel, SO−8 • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 12 mW @ 10 V 15 mW @ 4.5 V N−Channel ID MAX 11.5 A Applications • Synchronous FET for DC−DC Converters • Low Side Not.

  NTMS4873NF   NTMS4873NF






Power MOSFET

NTMS4873NF Power MOSFET Features www.DataSheet4U.com 30 V, 11.5 A, N−Channel, SO−8 • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 12 mW @ 10 V 15 mW @ 4.5 V N−Channel ID MAX 11.5 A Applications • Synchronous FET for DC−DC Converters • Low Side Notebook Non−VCORE Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, Tstg IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 8.9 7.2 1.39 7.1 5.7 0.87 11.5 9.2 2.31 56 −55 to 150 3.3 60.5 W A °C A mJ W A 1 Unit V V A W A G D S MARKING DIAGRAM/ PIN ASSIGNMENT Source Source Source Gate 1 4873NF AYWWG G 8 Drain Drain Drain Drain SO−8 CASE 751 STYLE 12 Top View Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 11 Apk, L = 1 mH, R.


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