NTMS4873NF Power MOSFET
Features
www.DataSheet4U.com
30 V, 11.5 A, N−Channel, SO−8
• • • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device
http://onsemi.com
V(BR)DSS 30 V RDS(ON) MAX 12 mW @ 10 V 15 mW @ 4.5 V N−Channel ID MAX 11.5 A
Applications
• Synchronous FET for DC−DC Converters • Low Side Not.
Power MOSFET
NTMS4873NF Power MOSFET
Features
www.DataSheet4U.com
30 V, 11.5 A, N−Channel, SO−8
• • • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device
http://onsemi.com
V(BR)DSS 30 V RDS(ON) MAX 12 mW @ 10 V 15 mW @ 4.5 V N−Channel ID MAX 11.5 A
Applications
• Synchronous FET for DC−DC Converters • Low Side Notebook Non−VCORE Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, Tstg IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 8.9 7.2 1.39 7.1 5.7 0.87 11.5 9.2 2.31 56 −55 to 150 3.3 60.5 W A °C A mJ W A
1
Unit V V A W A G
D
S
MARKING DIAGRAM/ PIN ASSIGNMENT
Source Source Source Gate 1 4873NF AYWWG G 8 Drain Drain Drain Drain
SO−8 CASE 751 STYLE 12
Top View
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 11 Apk, L = 1 mH, R.