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NTMS4404N Datasheet

Part Number NTMS4404N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NTMS4404N DatasheetNTMS4404N Datasheet (PDF)

NTMS4404N Power MOSFET 30 V, 12 A, Single N−Channel, SO−8 Features • High Density Power MOSFET with Ultra Low RDS(on) for Higher Efficiency • Miniature SO−8 Surface Mount Package Saving Board Space • IDSS Specified at Elevated Temperature • Diode Exhibits High Speed, Soft Recovery Applications • Power Management for Battery Power Products • Portable Products • Computers, Printers, PCMCIA Cards • Cell Phones, Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Sy.

  NTMS4404N   NTMS4404N






N-Channel Power MOSFET

NTMS4404N Power MOSFET 30 V, 12 A, Single N−Channel, SO−8 Features • High Density Power MOSFET with Ultra Low RDS(on) for Higher Efficiency • Miniature SO−8 Surface Mount Package Saving Board Space • IDSS Specified at Elevated Temperature • Diode Exhibits High Speed, Soft Recovery Applications • Power Management for Battery Power Products • Portable Products • Computers, Printers, PCMCIA Cards • Cell Phones, Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS $20 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 70°C tp v10 s TA = 25°C 9.6 A 7.6 12 Power Dissipation (Note 1) Steady State tp v10 s PD 1.56 W 2.5 Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady TA = 25°C ID State TA = 70°C TA = 25°C PD 7.0 A 5.6 0.83 W Pulsed Drain Current tp = 10 ms, DC = 2 % Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 20 V, VGS = 5 V, IPK = 7.25 A, L = 19 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TJ, TSTG IS EAS TL 50 A −55 to °C 150 6.0 A 500 mJ 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 80 °C/W Junction−to−Ambient – t = 1 0 s (Note 1) RqJA 50 Junction−to−Ambient – Steady State (Note 2) RqJA 150 1. Surface−m.


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