NTMS4404N
Power MOSFET
30 V, 12 A, Single N−Channel, SO−8
Features
• High Density Power MOSFET with Ultra Low RDS(on) for Higher
Efficiency
• Miniature SO−8 Surface Mount Package Saving Board Space • IDSS Specified at Elevated Temperature • Diode Exhibits High Speed, Soft Recovery
Applications
• Power Management for Battery Power Products • Portable Products • Computers, Printers, PCMCIA Cards • Cell Phones, Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Sy.
N-Channel Power MOSFET
NTMS4404N
Power MOSFET
30 V, 12 A, Single N−Channel, SO−8
Features
• High Density Power MOSFET with Ultra Low RDS(on) for Higher
Efficiency
• Miniature SO−8 Surface Mount Package Saving Board Space • IDSS Specified at Elevated Temperature • Diode Exhibits High Speed, Soft Recovery
Applications
• Power Management for Battery Power Products • Portable Products • Computers, Printers, PCMCIA Cards • Cell Phones, Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
$20
V
Continuous Drain Current (Note 1)
Steady TA = 25°C
ID
State TA = 70°C
tp v10 s TA = 25°C
9.6
A
7.6
12
Power Dissipation (Note 1)
Steady State tp v10 s
PD
1.56 W
2.5
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
Steady TA = 25°C
ID
State TA = 70°C
TA = 25°C
PD
7.0
A
5.6
0.83 W
Pulsed Drain Current tp = 10 ms, DC = 2 % Operating Junction and Storage Temperature
Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 20 V, VGS = 5 V, IPK = 7.25 A, L = 19 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IDM TJ, TSTG IS EAS
TL
50
A
−55 to °C 150
6.0
A
500 mJ
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
80 °C/W
Junction−to−Ambient – t = 1 0 s (Note 1)
RqJA
50
Junction−to−Ambient – Steady State (Note 2)
RqJA
150
1. Surface−m.