DatasheetsPDF.com

NTMFS5C450NL

ON Semiconductor

Power MOSFET

NTMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design ...


ON Semiconductor

NTMFS5C450NL

File Download Download NTMFS5C450NL Datasheet


Description
NTMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N−Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 40 ±20 110 81 68 34 27 19 3.7 1.6 740 −55 to +175 V V A W A W A °C Source Current (Body Diode) IS 76 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 7 A) EAS 215 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 2.2 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 41 1. The entire application environment impacts the thermal res...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)