NTMFS5C404NLT
Power MOSFET
40 V, 0.75 mW, 352 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Desig...
NTMFS5C404NLT
Power
MOSFET
40 V, 0.75 mW, 352 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF − Wettable Flank Option for Enhanced
Optical Inspection
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source
Voltage
Gate−to−Source
Voltage
Continuous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain C(Nuortreesnt1R, 2qJ,A3) Power Dissipation RqJA (Notes 1 & 2)
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD
IDM TJ, Tstg
40 ±20 352 249 200 100 49 35 3.9 1.9 900 −55 to + 175
V V A
W
A
W
A °C
Source Current (Body Diode)
IS 191 A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 38 A)
EAS 907 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.75 °C/W
Junction−to−Ambient − Steady State (No...