NTMFS4957N

NTMFS4957N Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL Features Optimized for Portable Applications with 5 V Gate Drive Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters Notebook Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA TA = 25°C TA = 100°C VDSS VGS ID 30 ±20 17.1 10.9 V V A Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s TA = 25°C TA = 25°C TA = 100°C PD ID 2.6 W 30 A 19 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 100°C PD ID 8.1 W 10.2 A 6.5 Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC = 85°C PD ID 0.92 W 70 A 44 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C TA = 25°C, tp = 10 ms PD IDM 43 W 210 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDmax TTSJT,...