NTMFS4833NS
Power MOSFET
30 V, 156 A, Single N−Channel, SO−8 FL
Features
• Accurate, Lossless Current Sensing • Low RD...
NTMFS4833NS
Power
MOSFET
30 V, 156 A, Single N−Channel, SO−8 FL
Features
Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery DC−DC Converters Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source
Voltage Gate−to−Source
Voltage Continuous Drain C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
26 A
TA = 85°C
18
Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen2t)RqJA
Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC
Steady State
TA = 25°C
TA = 25°C TA = 85°C TA = 25°C
TC = 25°C TC = 85°C
PD ID
PD ID
2.31 W
16 A 11.6 0.9 W
156 A 113
Power Dissipation RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
PD IDM TJ, TSTG
86.2 312 −55 to +150
W A °C
Source Current (Body Diode) Drain to Source DV/DT
IS dV/dt
86 A 6 V/ns
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 35 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
EAS TL
612.5 mJ 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should ...