NTMFS4825NFE
Power MOSFET
30 V, 171 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Includes Schottky Diode • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These are Pb−Free Device
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source .
Power MOSFET
NTMFS4825NFE
Power MOSFET
30 V, 171 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Includes Schottky Diode • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These are Pb−Free Device
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
29 A
TA = 85°C
21
Power Dissipation RqJA (Note 1)
Continuous Drain
Current 10 sec
RqJA
v
TA = 25°C
TA = 25°C TA = 85°C
PD ID
2.74 W
47 A 34
Power Dissipation RqJA, t v 10 sec Continuous Drain C(Nuortreen2t)RqJA
Steady State
TA = 25°C
TA = 25°C TA = 85°C
PD ID
7.3 W
17 A 12
Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C TC = 85°C
PD ID
0.95 W
171 A 123
Power Dissipation RqJC (Note 1) Pulsed Drain Current
TC = 25°C tp=10ms TA = 25°C
PD IDM
96.2 W 288 A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 50 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IDmaxpkg TJ, TSTG IS
dV/dt EAS
TL
100 −40 to +150
120 6
375
260
A °C
A V/ns mJ
°C
Str.