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NTMFS4825NFE Datasheet

Part Number NTMFS4825NFE
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMFS4825NFE DatasheetNTMFS4825NFE Datasheet (PDF)

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Includes Schottky Diode • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These are Pb−Free Device Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source .

  NTMFS4825NFE   NTMFS4825NFE






Power MOSFET

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Includes Schottky Diode • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These are Pb−Free Device Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA VDSS 30 V VGS ±20 V TA = 25°C ID 29 A TA = 85°C 21 Power Dissipation RqJA (Note 1) Continuous Drain Current 10 sec RqJA v TA = 25°C TA = 25°C TA = 85°C PD ID 2.74 W 47 A 34 Power Dissipation RqJA, t v 10 sec Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 85°C PD ID 7.3 W 17 A 12 Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC = 85°C PD ID 0.95 W 171 A 123 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C tp=10ms TA = 25°C PD IDM 96.2 W 288 A Current limited by package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 50 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDmaxpkg TJ, TSTG IS dV/dt EAS TL 100 −40 to +150 120 6 375 260 A °C A V/ns mJ °C Str.


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