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NTMC1300R2

ON Semiconductor

Power MOSFET

NTMC1300R2 Power MOSFET 3 Amps, 30 Volts Complementary SO−8 Dual Features • Ultra Low RDS(on) • Higher Efficiency Exten...


ON Semiconductor

NTMC1300R2

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NTMC1300R2 Power MOSFET 3 Amps, 30 Volts Complementary SO−8 Dual Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature SO−8 Surface Mount Package Applications DC−DC Converters Power Management in Portable and Battery Powered Products, i.e.: Computers, Printers, Cellular and Cordless Phones Low Voltage Motor Controls in Mass Storage Products, i.e.: Disk Drives, Tape Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous (Note 1) N−Channel P−Channel VDSS VGS ID 30 V ±20 V Adc 2.2 1.8 Drain Current − Continuous (Note 2) N−Channel P−Channel ID Adc 2.8 2.3 Drain Current − Continuous (Note 3) N−Channel P−Channel ID Adc 3.6 3.0 Drain Current − Pulsed N−Channel P−Channel IDM Apk 8.5 7.0 Total Power Dissipation @ TA = 25°C (Note 3) PD 2.0 W Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 10 Vdc, IL = 2.45 Apk, L = 25 mH, RG = 25 W) Thermal Resistance Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Ambient (Note 3) EAS RqJA 75 mJ 178.5 106 62.5 °C/W Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C 1. When surface mounted to an FR−4 board using minimum recommended pad size, (Cu Area 0.412 in2), Steady State. 2. When surface mounted to an FR−4 board using 1″ pad ...




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