www.DataSheet4U.com
NTLJS4114N Power MOSFET
Features
30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • •
Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS(on) in 2x2 mm Package 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device
V(BR)DSS
http://onsemi.com
RDS(on) MAX 35 mW @ 4.5 V 30 V 45 mW @ 2.5 V 55 mW @ 1..
Power MOSFET
www.DataSheet4U.com
NTLJS4114N Power MOSFET
Features
30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • •
Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS(on) in 2x2 mm Package 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device
V(BR)DSS
http://onsemi.com
RDS(on) MAX 35 mW @ 4.5 V 30 V 45 mW @ 2.5 V 55 mW @ 1.8 V S 7.8 A ID MAX (Note 1)
Applications
• DC−DC Conversion • Boost Circuits for LED Backlights • Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
G
• Low Side Load Switch for Noisy Environment
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C Steady State TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 3.3 3.6 2.6 0.70 28 −55 to 150 3.0 260 W D A °C A °C G 3 2 A D 1 Symbol VDSS VGS ID Value 30 ±12 6.0 4.4 7.8 1.92 W Unit V V A Pin 1 S D
D N−CHANNEL MOSFET
MARKING DIAGRAM
1 2 3 6 JA M G 5 G 4
WDFN6 CASE 506AP STYLE 1
JA = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either l.