NTJS3151P

NTJS3151P, NVJS3151P MOSFET – Power, Single, P-Channel, Trench, ESD Protected, SC-88 12 V, 3.3 A Features Leading Trench Technology for Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and PDAs V(BR)DSS −12 V D D www.onsemi.com RDS(on) Typ 45 mW @ −4.5 V 67 mW @ −2.5 V 133 mW @ −1.8 V ID Max −3.3 A SC−88 (SOT−363) 1 6D 2 5D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s Steady State TA = 25 °C TA = 85 °C TA = 25 °C TA = 25 °C VDSS VGS ID PD −12 ±12 −2.7 −2.0 −3.3 0.625 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TJ, TSTG IS TL −8.0 −55 to 150 −0.8 260 Units V V A W A °C A °C THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Units Junction−to−Ambient – Steady State RqJA 200 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 141 Junction−to−Lead – Steady State RqJL 102 Stresses exceeding those listed ...