NTHS5404T1

NTHS5404T1 MOSFET – Power, N-Channel, ChipFET 20 V, 7.2 A Features Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space Pb−Free Package is Available Applications Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards http://onsemi.com V(BR)DSS 20 V RDS(on) TYP 25 mW @ 4.5 V ID MAX 7.2 A D MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 Secs State Unit Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) VDS 20 V VGS "12 V ID A 7.2 5.2 5.2 3.8 IDM "20 A IS 7.2 5.2 A Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range PD TJ, Tstg 2.5 1.3 1.3 0.7 −55 to +150 W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2008 May, 2019− Rev. 5 1 G S N−Channel MOSFET ChipFET CASE 1206A STYLE 1 PIN CONNECTIONS D8 D7 D6 S5 1D 2D 3D 4G A2 M G G MARKING DIAGR...