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NTHD4N02F

Part Number	NTHD4N02F
Manufacturer	ON Semiconductor
Description	Power MOSFET and Schottky Diode
Published	May 13, 2005
Detailed Description	NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt Features...
Datasheet	NTHD4N02F PDF File

Overview

NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.
9 A, N−Channel, with 3.
7 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Better Thermals • Super Low Gate Charge MOSFET • Ultra Low VF Schottky • Pb−Free Package is Available Applications • Fast Switching, low Gate Charge for DC−to−DC Buck and Boost Converters • Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media Players • Load Side Switching MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady TJ = 25°C State TJ = ...

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